Ion doping technology using a bucket-type ion source to fabricate low temperature poly-Si TFTs is presented. Low energy and high ion density conditions are applied to realize the short doping time and resist mask doping for large area glass substrates. A novel CMOS doping technology with one resist mask process is proposed using compensation and inversion of the shollow doped layer. In combination with excimer laser crystallization and activation below 450°C, high performance CMOS TFTs are produced.